Datasheet
2011-08-30
1
BCR191...
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
= 22 kΩ , R
2
= 22 kΩ )
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR191
BCR191W
EHA07183
3
21
C
EB
R
1
R
2
Type Marking Pin Configuration Package
BCR191
BCR191W
WOs
WOs
1=B
1=B
2=E
2=E
3=C
3=C
-
-
-
-
-
-
SOT23
SOT323
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
50 V
Collector-base voltage V
CBO
50
Input forward voltage V
i(fwd)
60
Input reverse voltage V
i(rev)
10
Collector current I
C
100 mA
Total power dissipation-
BCR191, T
S
≤ 102°C
BCR191W, T
S
≤ 124°C
P
tot
200
250
mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150








