Datasheet

2007-05-29
5
BCR400W
Total power dissipation P
tot
= f (T
S
)
0 20 40 60 80 100 120
°C
150
T
S
0
50
100
150
200
250
300
mW
400
P
tot
Note that up to T
S
=115°C
it is not possible to exceed P
tot
respecting the maximum
ratings of V
S
and I
Contr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
Typical application for GaAs FET
with active bias controller
EHA07190
400BCR
4
3
1
2
+
S
V
R
ext
100 pF
V
G
-
Ωk100
100 kΩ
1 nF
RF IN
RF OUT