Datasheet

2007-04-19
1
BAT60A...
Silicon Schottky Diode
High current rectifier Schottky diode with
extreme low V
F
drop (typ. 0.12V at I
F
= 10mA)
For power supply applications
For clamping and protection in low voltage
applications
For detection and step-up-conversion
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAT60A
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT60A SOD323 single white/3
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage
2)
V
R
10 V
Forward current I
F
3 A
Non-repetitive peak surge forward current
(t 10ms)
I
FSM
5
Total power dissipation
T
S
28°C
P
tot
1350 mW
Junction temperature T
j
150 °C
Operating temperature range T
o
p
-55 ... 85
Storage temperature T
st
g
-55 ... 150
1
Pb-containing package may be available upon special request
2
For T
A
> 25 °C the derating of V
R
has to be considered. Please refer to curve Permissible reverse voltage.

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