Datasheet
2007-04-19
1
BAL99...
Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAL99
!
Type Package Configuration Marking
BAL99 SOT23 single JFs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage- V
RM
85
Forward current I
F
250 mA
Peak forward current I
FM
-
Surge forward current, t = 1 µs I
FS
4.5 A
Total power dissipation
T
S
≤ 54°C
P
tot
370 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
2)
R
thJS
≤ 260
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance






