Datasheet

2011-07-21
4
BA592/BA892...
Diode capacitance C
T
= ƒ (V
R
)
f = Parameter
0 5 10 15 20
V
30
VR
0
0.4
0.8
1.2
pF
2
C
T
1 MHz ... 1 GHz
Reverse parallel resistance R
P
= ƒ(V
R
)
f = Parameter
0 5 10 15 20
V
30
V
R
-1
10
0
10
1
10
2
10
3
10
KOhm
R
p
100 MHz
1 GHz
Forward resistance r
f
= ƒ (I
F
)
f = 100MHz
10
-2
10
-1
10
0
10
1
10
2
mA
I
F
-1
10
0
10
1
10
2
10
Ohm
r
f
Forward current I
F
= ƒ (V
F
)
T
A
= Parameter
0 0.2 0.4 0.6 0.8
V
1.2
V
F
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
I
F
-40 °C
25 °C
85 °C
125 °C