Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsDiodesBA 592 HF Diode Case type SOD 323 I(F) voltage:100 mA

2011-07-21

BA592/BA892...

Silicon RF Switching Diode

• For band switching in TV/VTR tuners

and mobile applications

• Very low forward resistance (typ. 0.45 Ω @ 3 mA)

• Small capacitance

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BA592

BA892/-02L

BA892-02V



Type Package Configuration L

(nH) Marking

BA592

BA892

BA892-02L

BA892-02V

SOD323

SCD80

TSLP-2-1

SC79

single

single, leadless

single

1.8

0.6

0.4

0.6

blue S

Maximum Ratings at T

= 25°C, unless otherwise specified

Parameter Symbol Value Unit

Diode reverse voltage V

35 V

Forward current I

100 mA

Junction temperature T

150 °C

Operating temperature range T

-55 ... 125

Storage temperature T

-55 ... 150

Summary of content (11 pages)

PAGE 1
BA592/BA892... Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance (typ. 0.45 Ω @ 3 mA) • Small capacitance • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BA592 BA892/-02L BA892-02V Type BA592 BA892 BA892-02L BA892-02V Package SOD323 SCD80 TSLP-2-1 SC79 Configuration single single single, leadless single LS(nH) 1.8 0.6 0.4 0.
PAGE 2
BA592/BA892... Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BA592 ≤ 135 BA892, BA892-02V ≤ 120 BA892-02L ≤ 70 Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max.
PAGE 3
BA592/BA892... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 0.65 0.92 1.4 VR = 3 V, f = 1 MHz 0.6 0.85 1.1 - 1 - - 100 - VR = 0 V, f = 100 MHz Reverse parallel resistance RP kΩ VR = 0 V, f = 100 MHz Forward resistance Ω rf IF = 3 mA, f = 100 MHz - 0.45 0.7 IF = 10 mA, f = 100 MHz - 0.36 0.
PAGE 4
BA592/BA892... Diode capacitance CT = ƒ (VR) Reverse parallel resistance RP = ƒ(VR) f = Parameter f = Parameter 10 3 2 KOhm 100 MHz pF Rp CT 10 2 1.2 10 1 1 GHz 1 MHz ... 1 GHz 0.8 10 0 0.
PAGE 5
BA592/BA892... Insertion loss IL = -|S21|2 = ƒ(f) Isolation ISO = -|S21 |2 = ƒ(f) IF = Parameter VR = Paramter BA892-02L in series configuration, Z = 50Ω BA892-02L in series configuration, Z = 50Ω 0 0 dB |S21|2 |S21|2 dB 10 mA 3 mA 1 mA 0.1 mA -0.2 -10 0V 1V 10 V -15 -20 -0.3 -25 -0.4 0 0.5 1 1.5 2 GHz -30 0 3 f 0.5 1 1.
PAGE 6
Package SC79 6 BA592/BA892...
PAGE 7
Package SCD80 BA592/BA892... Package Outline 0.2 M A +0.05 0.13 -0.03 0.8 ±0.1 0.2 ±0.05 10˚MAX. 1.7 ±0.1 1 0.3 ±0.05 Cathode marking 7˚ ±1.5˚ 1.3 ±0.1 A 2 0.7 ±0.1 0.35 1.45 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63-02W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Reel with 2 mm Pitch 2 0.2 2.5 8 1.45 Standard 4 Cathode marking 0.
PAGE 8
BA592/BA892...
PAGE 9
Package SOD323 9 BA592/BA892...
PAGE 10
Package TSLP-2-1 10 BA592/BA892...
PAGE 11
BA592/BA892... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.