Datasheet

AUIRFB/S/SL8409
www.irf.com © 2013 International Rectifier April 30, 2013
6
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dt
Fig. 20 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
Fig 16. On-Resistance vs. Gate Voltage
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
2
4
6
8
10
12
I
R
R
M
(
A
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
0
2
4
6
8
10
12
I
R
R
M
(
A
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
60
100
140
180
220
260
Q
R
R
(
n
C
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/µs)
50
100
150
200
250
300
Q
R
R
(
n
C
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0.0
2.0
4.0
6.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 100A
T
J
= 25°C
T
J
= 125°C