Datasheet

AUIRF540Z/S
2 www.irf.com
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 100 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.093 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 21 26.5
m
Ω
V
GS(th)
Gate Threshold Volta
g
e2.0–––4.0V
g
fs Forward Transconductance 36 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Char
g
e ––– 42 63
Q
gs
Gate-to-Source Char
g
e ––– 9.7 –––
Q
gd
Gate-to-Drain ("Miller") Char
g
e–––15–––
t
d(on)
Turn-On Dela
y
Time –––15–––
t
r
Rise Time –––51–––
t
d(off)
Turn-Off Dela
y
Time –––43–––
t
f
Fall Time –––39–––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 1770 –––
C
oss
Output Capacitance ––– 180 –––
C
rss
Reverse Transfer Capacitance ––– 100 –––
C
oss
Output Capacitance ––– 730 –––
C
oss
Output Capacitance ––– 110 –––
C
oss
eff.
Effective Output Capacitance ––– 170 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recover
y
Time –––3350ns
Q
rr
Reverse Recover
y
Char
g
e ––– 41 62 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 22A
R
G
= 12 Ω
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C, I
F
= 22A, V
DD
= 50V
di/dt = 100A/
µ
s
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 22A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 22A
I
D
= 22A
V
DS
= 80V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V
–––
–––
–––
–––
4.5
7.5
nC
ns
nH
pF
A
36
140
––– –––
––– –––
Notes  through  are on page 12