Datasheet

QL78F6S-A

AlGaAs Laser Diode

Quantum Semiconductor International Co., Ltd.

♦OVERVIEW

QL78F6S-A is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure.

It’s an attractive light source, with a typical light output power of 10mW for industrial optical module

and sens

or application

♦APPLICATION

- Sensor

- Industrial optical module

♦FEATURES

- Visible Light Output : λp = 780 nm

- Optical Power Output : 10mW CW

Package Type : TO-18 (5.6mmφ)

- Built-in Photo Diode for Monitoring Laser Diode

♦ELECTRICAL CONNECTION

QL78F6SA

LD cathod, PD anode (Fig. 1)

B LD , PD anode (Fig. 2)

C LD anode, PD cathod (Fig. 3)

Ver. 0 2004

Pin Configuration Bottom View

Fig. 3

QL78F6SA

distributed by

Ohmstrasse 4 Tel.: +49 89 3214120

85716 Unterschleissheim Fax.: +49 89 32141211

www.imm-photonics.de sales@imm-photonics.de

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QL78F6S-A AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 2004 ♦OVERVIEW QL78F6S-A is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 1 0mW for ind ustrial optical module and sensor application ♦APPLICATION - Sensor - Industrial optical module ♦FEATURES - Visible Light Output : λp = 780 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.
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♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Values Unit Optical Output Power P 12 mW Laser Diode Reverse V 2 V V 30 V Voltage Photo Diode Reverse Voltage Operating Temperature Topr −10 ~ +60 °C Storage Temperature Tstg −40 ~ +85 °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Symbols Min. Typ.
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♦PACKAGE DIMENSION distributed by Ohmstrasse 4 85716 Unterschleissheim www.imm-photonics.de Tel.: +49 89 3214120 Fax.: +49 89 32141211 sales@imm-photonics.