Datasheet

Specifications of the HT2 MOA3 S20 Rev. 1.1 1997-08-19
Ht2moa3.doc/HS Page 6 of 22
2.6 Electrical Specifications
Symbol min typ max Comment / Conditions
Absolute Maximum Ratings
Junction Temperature T
J
-55°C 140°C
Input Peak Current I
INpeak
30 mA
Latch up Current 100 mA MIL-STD 883D, Method 3023
ESD 2 kV MIL-STD 883D, Method 3015.7,
Human Body
Operating Range
Temperature T
A
-40°C 85°C
R
ThJunctionAmbient
≤
30 K/W @
I
INpeak
= 30 mA
Input Read Only Threshold
Voltage
1)
3)
V
IN,RO
2,8 V
p
3,9 V
p
start modulation in read only
modes
Input Threshold Voltage
1)
3)
V
IN,TH
3,1 V
p
4,2 V
p
start modulation after SETCC
Input Read Voltage
1)
3)
V
IN,RD
3,5 V
p
4,5 V
p
read E²PROM
Input Write Voltage
1)
3)
V
IN,WR
3,7 V
p
4,7 V
p
write E²PROM
Demodulator
Range
3)
V
DEM_R
2,0 V
p
4,0 V
p
V
INHigh
- V
INLow
@ V
INHigh
= 5,0 V
p
T
0
=8 µs, T
MOD
=6*T
0
2)
Modulator
R_MOD linear
3)
R
MODL
4,5 k
Ω
V
INLow
≤
2,0 V
p
R_MOD nonlinear
3)
R
MODNL
3,6 k
Ω
V
INLow
≥
2,0 V
p
Resonance Capacitor
3)
C
ResInit
189 pF 210 pF 231 pF V
IN
= 4,0 V
p
EEPROM
Write Current
4)
I
W
25 µA V
DD
= 2,8 V
Read Current
4)
I
R
9 µA V
DD
= 2,8 V
Data Retention Years 10 @ 55°C
Write Endurance Cycles 100.000
1)

V
IN

=

V
IN1
−
V
IN2

... voltage between connection pads
2)
V
INHigh
input voltage before modulation
V
INLow
input voltage during modulation
T
MOD
duration of the modulation
3)
@ R
i
= 10
k
Ω
resistance of measurement equipment
4)
tested on silicon level