Datasheet

ManualsBrandsHynix Manualscomputer componentsHMT351S6CFR8C-H9

Table Of Contents

Description
Fetures
Ordering Information
Key Parameters
Speed Grade
Address Table
Pin Descriptions
Input/Output Functional Descriptions
Pin Assignments
Functional Block Diagram
- 2GB, 256Mx64 Module(1Rank of x8)
- 4GB, 512Mx64 Module(2Rank of x8)
Absolute Maximum Ratings
- Absolute Maximum DC Ratings
- DRAM Component Operating Temperature Range
AC & DC Operating Conditions
- Recommended DC Operating Conditions
AC & DC Input Measurement Levels
- AC and DC Input Levels for Single-Ended Command and Address Signals
- AC and DC Input Levels for Single-Ended Signals
Vref Tolerances
AC and DC Logic Input Levels for Differential Signals
- Differential signal definition
- Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)
- Single-ended requirements for differential signals
- Differential Input Cross Point Voltage
- Slew Rate Definitions for Single-Ended Input Signals
- Slew Rate Definitions for Differential Input Signals
AC & DC Output Measurement Levels
- Single Ended AC and DC Output Levels
- Differential AC and DC Output Levels
- Single Ended Output Slew Rate
- Differential Output Slew Rate
- Reference Load for AC Timing and Output Slew Rate
Overshoot and Undershoot Specifications
- Address and Control Overshoot and Undershoot Specifications
- Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
Refresh parameters by device density
Standard Speed Bins
- DDR3-800 Speed Bins
- DDR3-1066 Speed Bins
- DDR3-1333 Speed Bins
- DDR3-1600 Speed Bins
- Speed Bin Table Notes
IDD and IDDQ Specification Parameters and Test Conditions
IDD Specifications (Tcase: 0 to 95oC)
- 2GB, 256M x 64 SO-DIMM: HMT325S6CFR8C
- 4GB, 512M x 64 SO-DIMM: HMT351S6CFR8C
Module Dimensions
- 256Mx64 - HMT325S6CFR8C
- 512Mx64 - HMT351S6CFR8C

Rev. 1.0/Sep. 2012 35

Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements

[Note: DIMM level Output test load condition may be different from above

Figure 2 - Correlation from simulated Channel IO Power to actual Channel IO Power supported

by IDDQ Measurement

VDD

DDR3

SDRAM

VDDQ

RESET

CK/CK

DQS, DQS

RAS, CAS, WE

A, BA

ODT

VSS VSSQ

DQ, DM,

TDQS, TDQS

CKE

RTT = 25 Ohm

VDDQ/2

IDD

IDDQ (optional)

Application specific

memory channel

environment

Channel

IO Power

Simulation

IDDQ

Simulation

IDDQ

Simulation

Channel IO Power

Number

IDDQ

Test Load

Correction