Reference Guide

Equation Reference 5-51
Variable
Description
Js
Saturation current density
L
Drawn mask length (PN Step Junctions), or
Drawn gate length (NMOS Transistors), or
Channel length (JFETs)
Le
Effectives gate length
NA
P-side doping (PN Step Junctions), or
Substrate doping (NMOS Transistors)
ND
N-side doping (PN Step Junctions), or
N-channel doping (JFETs)
T
Temperature
tox
Gate silicon dioxide thickness
Va
Applied voltage
VBC
Base-to-collector voltage
VBE
Base-to-emitter voltage
Vbi
Built-in voltage
VBS
Substrate voltage
VCEsat
Collector-to-emitter saturation voltage
VDS
Applied drain voltage
VDsat
Saturation voltage
VGS
Applied gate voltage
Vt
Threshold voltage
Vt0
Threshold voltage (at zero substrate voltage)
W
Drawn mask width (PN Step Junctions), or
Drawn width (NMOS Transistors), or
Channel width (JFETs)
We
Effective width
xd
Depletion-region width
xdmax
Depletion-layer width
xj
Junction depth
References: 5, 8.