Data Sheet

BC556 ... BC559
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- V
CE
= 80 V, (B-E short)
- V
CE
= 50 V, (B-E short)
- V
CE
= 30 V, (B-E short)
BC546
BC547
BC548 / BC549
- I
CES
- I
CES
- I
CES
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
- V
CE
= 80 V, T
j
= 125°C, (B-E short)
- V
CE
= 50 V, T
j
= 125°C, (B-E short)
- V
CE
= 30 V, T
j
= 125°C, (B-E short)
BC546
BC547
BC548 / BC549
- I
CES
- I
CES
- I
CES
4 µA
4 µA
4 µA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- V
CEsat
- V
CEsat
80 mV
250 mV
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- V
BEsat
- V
BEsat
700 mV
900 mV
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
- V
BE
- V
BE
600 mV
660 mV
750 mV
800 mV
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz f
T
150 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=ie = 0, f = 1 MHz C
CBO
3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz C
EB0
10 pF
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA, R
G
= 2 k
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
F
F
2 dB
1 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
< 200 K/W
1
)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC546 ... BC549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC556A
BC557A
BC558A
BC556B
BC557B
BC558B
BC559B
BC557C
BC558C
BC559C
2 Tested with pulses t
p
= 300 µs, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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