Data Sheet

1996 Sep 18 3
Philips Semiconductors Product specification
High-speed diodes PMLL4148; PMLL4446; PMLL4448
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage see Fig.3
PMLL4148 I
F
= 10 mA − 1.0 V
PMLL4446 I
F
= 20 mA − 1.0 V
PMLL4448 I
F
= 5 mA 620 720 mV
I
F
= 100 mA − 1.0 V
I
R
reverse current V
R
= 20 V; see Fig.5 25 nA
V
R
= 20 V; T
j
= 150 °C; see Fig.5 − 50 µA
I
R
reverse current; PMLL4448 V
R
= 20 V; T
j
= 100 °C; see Fig.5 − 3 µA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 4 pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA; see Fig.7
4 ns
V
fr
forward recovery voltage when switched from I
F
= 50 mA;
t
r
= 20 ns; see Fig.8
− 2.5 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 300 K/W
R
th j-a
thermal resistance from junction to ambient note 1 350 K/W