Data Sheet

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DATA SHEET

Product speciﬁcation

Supersedes data of April 1996

File under Discrete Semiconductors, SC01

1996 Sep 18

DISCRETE SEMICONDUCTORS

PMLL4148; PMLL4446;

PMLL4448

High-speed diodes

1/3 page (Datasheet)

M3D054

Summary of content (7 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 PMLL4148; PMLL4446; PMLL4448 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 18
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Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4446; PMLL4448 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The PMLL4148, PMLL4446, PMLL4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max.
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Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4446; PMLL4448 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MIN. MAX. UNIT see Fig.3 PMLL4148 IF = 10 mA − 1.0 V PMLL4446 IF = 20 mA − 1.0 V PMLL4448 IF = 5 mA 620 − IF = 100 mA IR reverse current VR = 20 V; see Fig.5 VR = 20 V; Tj = 150 °C; see Fig.5 IR reverse current; PMLL4448 VR = 20 V; Tj = 100 °C; see Fig.
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Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4446; PMLL4448 GRAPHICAL DATA MBG451 300 MBG464 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) 100 (3) 200 0 0 0 100 Tamb (oC) 200 0 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.
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Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4446; PMLL4448 MGD006 103 handbook, halfpage MGD004 1.2 handbook, halfpage IR (µA) Cd (pF) 102 1.0 (1) (2) (3) 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature.
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Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4446; PMLL4448 handbook, full pagewidth tr tp t D.U.T. 10% IF R = 50 Ω S IF SAMPLING OSCILLOSCOPE t rr t R = 50 Ω i V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.
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Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4446; PMLL4448 PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 3.3 MBA390 - 2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.