Data Sheet

TELEFUNKEN Semiconductors
TLL.440.
Rev. A1: 01.06.1995 3 (7)
Green (TLLG440. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity I
F
= 2 mA, I
Vmin
/I
Vmax
≥ 0.5 TLLG4400 I
V
0.63 1.2 mcd
y
F
,
Vmin Vmax
TLLG4401 I
V
1 2 mcd
Dominant wavelength I
F
= 2 mA l
d
562 575 nm
Peak wavelength I
F
= 2 mA l
p
565 nm
Angle of half intensity I
F
= 2 mA ϕ ±25 deg
Forward voltage I
F
= 2 mA V
F
1.9 2.4 V
Reverse voltage I
R
= 10 m A V
R
6 20 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Typical Characteristics (T
amb
= 25 _ C, unless otherwise specified)
020406080
0
5
10
15
20
25
P – Power Dissipation ( mW )
V
T
amb
– Ambient Temperature ( °C )
100
95 10048
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
2
4
6
8
10
I – Forward Current ( mA )
F
T
amb
– Ambient Temperature ( °C )
100
95 10049
Figure 2. Forward Current vs. Ambient Temperature
0.4 0.2 0 0.2 0.4
0.6
95 10060
0.6
0.9
0.8
0°
30°
10
°
20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
01234
0.1
1
10
100
V
F
– Forward Voltage ( V )
5
95 10050
I – Forward Current ( mA )
F
High Efficiency Red
t
p
/T=0.001
t
p
=10 m s
Figure 4. Forward Current vs. Forward Voltage