Data Sheet

TELEFUNKEN Semiconductors
TLL.440.
Rev. A1: 01.06.19952 (7)
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLLR440. ,TLLY440. ,TLLG440.
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
R
6 V
DC forward current I
F
7 mA
Surge forward current t
p
≤ 10 m s I
FSM
0.15 A
Power dissipation T
amb
≤ 84 ° C P
V
20 mW
Junction temperature T
j
100 ° C
Operating temperature range T
amb
–40 to +100 ° C
Storage temperature range T
stg
–55 to +100 ° C
Soldering temperature t ≤ 5 s, 2 mm
from body
T
sd
260 ° C
Thermal resistance junction/ambient R
thJA
800 K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
High efficiency red (TLLR440. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity I
F
= 2 mA, I
Vmin
/I
Vmax
≥ 0.5 TLLR4400 I
V
0.63 1.2 mcd
y
F
,
Vmin Vmax
TLLR4401 I
V
1 2 mcd
Dominant wavelength I
F
= 2 mA l
d
612 625 nm
Peak wavelength I
F
= 2 mA l
p
635 nm
Angle of half intensity I
F
= 2 mA ϕ ±25 deg
Forward voltage I
F
= 2 mA V
F
1.9 2.4 V
Reverse voltage I
R
= 10 m A V
R
6 20 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Yellow (TLLY440. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity I
F
= 2 mA, I
Vmin
/I
Vmax
≥ 0.5 TLLY4400 I
V
0.63 1.2 mcd
y
F
,
Vmin Vmax
TLLY4401 I
V
1 2 mcd
Dominant wavelength I
F
= 2 mA l
d
581 594 nm
Peak wavelength I
F
= 2 mA l
p
585 nm
Angle of half intensity I
F
= 2 mA ϕ ±25 deg
Forward voltage I
F
= 2 mA V
F
2.4 2.9 V
Reverse voltage I
R
= 10 m A V
R
6 20 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF