User's Manual

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PR533_SDS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.6 — 27 October 2014
206436 19 of 36
NXP Semiconductors
PR533
USB NFC integrated reader solution
[1] The value does not guarantee the power-down consumptions. To reach the specified power-down consumptions, the limit is
V
DD(PVDD)
0.4 V.
[2] The value does not guarantee the power-down consumptions. To reach the specified power-down consumptions, the limit is 0.4 V.
[1] The I
OH
and I
OL
give the output driving capability and allow to calculate directly the rise and fall time as function of the load capacitance
Table 21. Input Pin characteristics for DP for HSU interface
Symbol Parameter Conditions Min Typ Max Unit
V
IH
HIGH-level input voltage
[1]
0.7 V
DD(PVDD)
-V
DD(PVDD)
V
V
IL
LOW-level input voltage
[2]
0-0.3 V
DD(PVDD)
V
I
IH
HIGH-level input current V
i
= V
DD(PVDD)
--1mA
I
IL
LOW-level input current V
i
= 0 V - - 1 mA
I
LI
input leakage current RSTPD_N = 0 V 11mA
C
i
input capacitance - 2.5 3.5 pF
Table 22. Output Pin characteristics for DM for HSU interface
Symbol Parameter Conditions Min Typ Max Unit
V
OH
HIGH-level output
voltage
V
DD(PVDD)
=3V; I
OH
= 4 mA V
DD(PVDD)
0.4 - V
DD(PVDD)
V
V
DD(PVDD)
=1.8V; I
OH
= 2 mA V
DD(PVDD)
0.4 - V
DD(PVDD)
V
V
OL
LOW-level output volt-
age
V
DD(PVDD)
=3V; I
OL
= 4 mA 0 - 0.4 V
V
DD(PVDD)
=1.8V; I
OL
= 2 mA 0 - 0.4 V
I
OH
HIGH-level output
current
V
DD(PVDD)
=3V;
V
OH
=0.8 V
DD(PVDD)
[1]
4--mA
V
DD(PVDD)
=1.8V;
V
OH
=0.7 V
DD(PVDD)
2--mA
I
OL
LOW-level output cur-
rent
V
DD(PVDD)
=3.3V;
V
OL
=0.2 V
DD(PVDD)
[1]
4--mA
V
DD(PVDD)
=1.8V;
V
OL
=0.3 V
DD(PVDD)
2--mA
I
LI
input leakage current RSTPD_N = 0 V 1-1mA
C
L
load capacitance - - 30 pF
t
r
rise time V
DDP
=3V;
V
OH
=0.8 V
DD(PVDD)
;
C
L
=30pF
- - 13.5 ns
V
DD(PVDD)
=1.8V;
V
OH
=0.7 V
DD(PVDD)
;
C
L
=30pF
- - 10.8 ns
t
f
fall time V
DD(PVDD)
=3V;
V
OL
=0.2 V
DD(PVDD)
;
C
L
=30pF
- - 13.5 ns
V
DDP
=1.8V;
V
OL
=0.3 V
DD(PVDD)
;
C
L
=30pF
- - 10.8 ns