User's Manual

PR533_SDS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.6 — 27 October 2014
206436 13 of 36
NXP Semiconductors
PR533
USB NFC integrated reader solution
10.7 RSTOUT_N output pin characteristics
[1] Data at V
DD(PVDD)
= 1.8V are only given from characterization results.
[2] I
OH
and I
OL
give the output drive capability from which the rise and fall times may be calculated as a function of the load capacitance.
Table 14. RSTOUT_N output pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
OH
HIGH-level output
voltage
V
DD(PVDD)
=3V; I
OH
= 4mA 0.7 V
DD(PVDD)
-V
DD(PVDD)
V
V
DD(PVDD)
=1.8V; I
OH
= 2mA
[1]
0.7  V
DD(PVDD)
-V
DD(PVDD)
V
V
OL
LOW-level output
voltage
V
DD(PVDD)
=3V; I
OL
=4mA 0 - 0.3 V
DD(PVDD)
V
V
DD(PVDD)
=1.8V; I
OL
=2mA
[1]
0-0.3 V
DD(PVDD)
V
I
OH
HIGH-level output
current
V
DD(PVDD)
=3V; V
OH
=
0.8  V
DD(PVDD)
[2]
4-- mA
V
DD(PVDD)
=1.8V; V
OH
=
0.7  V
DD(PVDD)
2-- mA
I
OL
LOW-level output
current
V
DD(PVDD)
=3V; V
OL
=
0.2  V
DD(PVDD)
[2]
4--mA
V
DD(PVDD)
=1.8V; V
OL
=
0.3  V
DD(PVDD)
2--mA
C
L
load capacitance - 30 pF
t
r
rise time V
DD(PVDD)
=3V;
V
OH
=0.8 V
DD(PVDD)
; C
L
=30pF
--13.5ns
V
DDP
=1.8V;
V
OH
=0.7 V
DD(PVDD)
; C
L
=30pF
--10.8ns
t
f
fall time V
DD(PVDD)
=3V;
V
OL
=0.2 V
DD(PVDD)
; C
L
=30pF
--13.5ns
V
DD(PVDD)
=1.8V;
V
OL
=0.3 V
DD(PVDD)
; C
L
=30pF
--10.8ns