Datasheet

FLASH Memory (FLASH)

FLASH Control Register

MC68HC908QY4•MC68HC908QT4•MC68HC908QY2•MC68HC908QT2•MC68HC908QY1•MC68HC908QT1

MOTOROLA FLASH Memory (FLASH) 47

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4.4 FLASH Control Register

The FLASH control register (FLCR) controls FLASH program and erase

operations.

HVEN — High Voltage Enable Bit

This read/write bit enables high voltage from the charge pump to the

memory for either program or erase operation. It can only be set if

either PGM =1 or ERASE =1 and the proper sequence for program

or erase is followed.

1 = High voltage enabled to array and charge pump on

0 = High voltage disabled to array and charge pump off

MASS — Mass Erase Control Bit

This read/write bit configures the memory for mass erase operation.

1 = Mass Erase operation selected

0 = Mass Erase operation unselected

ERASE — Erase Control Bit

This read/write bit configures the memory for erase operation.

ERASE is interlocked with the PGM bit such that both bits cannot be

equal to 1 or set to 1 at the same time.

1 = Erase operation selected

0 = Erase operation unselected

PGM — Program Control Bit

This read/write bit configures the memory for program operation.

PGM is interlocked with the ERASE bit such that both bits cannot be

equal to 1 or set to 1 at the same time.

1 = Program operation selected

0 = Program operation unselected

Address: $FE08

Bit 7654321Bit 0

HVEN MASS ERASE PGM

Write:

Reset:00000000

Figure 4-1. FLASH Control Register (FLCR)