Datasheet

MC68HC908QY4•MC68HC908QT4•MC68HC908QY2•MC68HC908QT2•MC68HC908QY1•MC68HC908QT1
222 Electrical Specifications MOTOROLA
Electrical Specifications
NON-DISCLOSURE AGREEMENT REQUIRED
18.14 Memory Characteristics
Characteristic Symbol Min Max Unit
RAM data retention voltage
V
RDR
1.3 — V
FLASH program bus clock frequency — 1 — MHz
FLASH read bus clock frequency
f
Read
(1)
32 k 8M Hz
FLASH page erase time
<1 K cycles
<10 K cycles
t
Erase
(2)
1
4
—
—
ms
FLASH mass erase time
t
MErase
(3)
4 — ms
FLASH PGM/ERASE to HVEN set up time
t
nvs
10 — us
FLASH high-voltage hold time
t
nvh
5 — us
FLASH high-voltage hold time (mass erase)
t
nvhl
100 — us
FLASH program hold time
t
pgs
5 — us
FLASH program time
t
PROG
30 40 us
FLASH return to read time
t
rcv
(4)
1 — us
FLASH cumulative program hv period
t
HV
(5)
— 4ms
FLASH row erase endurance
(6)
— 10 k — Cycles
FLASH row program endurance
(7)
— 10 k — Cycles
FLASH data retention time
(8)
— 10 — Years
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than t
Erase
(Min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
3. If the mass erase time is longer than t
MErase
(Min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
4. t
rcv
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to logic 0.
5. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition: t
nvs
+ t
nvh
+ t
pgs
+ (t
PROG
x 32) ≤ t
HV
max.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified.