Datasheet
FTLX3812M3xx Amplified DWDM XFP Product Specification – January 2011 F i n i s a r
© Finisar Corporation 11-January-2011 Rev C1 Page 6
IV. Optical Characteristics (EOL, T
OP
= -5 to 70°C, V
CC5
= 4.75 to 5.25 Volts)
Please note that the Transmitter of the FTLX3812M3xx becomes operational within 60
seconds of power-up. This is due to the time required for the EML to reach its optimum
operating temperature.
Transmitter
Parameter Symbol Min Typ Max Unit Ref.
Output Opt. Pwr: 9/125 SMF P
OUT
-3 +3 dBm
Optical Extinction Ratio ER 8.2 dB
Center Wavelength Spacing
100 GHz 1
Transmitter Center Wavelength –
End Of Life
λ
c
X-100 X X+100 pm 2
Transmitter Center Wavelength –
Beginning Of Life
λ
c
X-25 X X+25 pm 2
Sidemode Suppression ratio SSR
min
30 dB
Tx Jitter Generation (peak-to-peak) Tx
j
0.1 UI 3
Tx Jitter Generation (RMS) Tx
jRMS
0.01 UI 4
Relative Intensity Noise RIN -130 dB/Hz
Receiver
Maximum Input Power P
MAX
-7 dBm
Optical Center Wavelength
λ
C
1270 1600 nm
Receiver Reflectance R
rx
-27 dB
LOS De-Assert LOS
D
-30 dBm
LOS Assert LOS
A
-37 dBm
LOS Hysteresis 0.5 dB
Receiver Sensitivity
5
Data rate
(Gb/s)
BER Dispersion (ps/nm)
Sensitivity back-to-
b
ack at OSNR>30dB
(dBm)
Power Penalty
at OSNR>30dB
(dB)
Threshold
Adjustm.
Required
9.95 1e-12 -500 to 1450 -23 3 No
10.3 1e-12 -500 to 1450 -23 3 No
10.7 1e-4 -500 to 1300 -27 3 Yes
11.1 1e-4 -500 to 1300 -27 3 Yes
OSNR Performance
6
Data rate
(Gb/s)
BER Dispersion (ps/nm)
Min OSNR Back-to-
back at Power: -7 to -
18dBm (dB)
Max OSNR Penalty
at Power:-7 to -18dBm
(dB)
Threshold
Adjustm.
Required
9.95 1e-12 -500 to 1450 24 4 No
10.3 1e-12 -500 to 1450 24 4 No
10.7 1e-4 -500 to 1300 16 4 Yes
11.1 1e-4 -500 to 1300 16 4 Yes
Notes:
1. Corresponds to approximately 0.8 nm.
2. X = Specified ITU Grid wavelength. Wavelength stability is achieved within 60 seconds of power up.
3. Measured with a host jitter of 50 mUI peak-to-peak.
4. Measured with a host jitter of 7 mUI RMS.
5. Measured at 1528-1600nm with worst ER; BER<10
-12
; PRBS31.
6. All OSNR measurements are performed with 0.1nm resolution.