Datasheet
NPN General Purpose Amplifier
MMBTA06MPSA06 PZTA06
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 80 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1G
B
C
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Symbol Characteristic Max Units
MPSA06 *MMBTA06 **PZTA06
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200 357 125
°
C/W
1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06