Datasheet

Rev. A, April 2003
FQP6N90C/FQPF6N90C
©2003 Fairchild Semiconductor Corporation
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µ
s
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
$
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µ
s
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
$
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP6N90C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF6N90C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
$
Notes :
1. V
GS
= 0 V
2. I
D
= 250
'
A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
$
Notes :
1. V
GS
= 10 V
2. I
D
= 3.0 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
2
4
6
8
I
D
, Drain Current [A]
T
C
, Case Temperature [
%
]