Datasheet

Rev. A, April 2003
FQP6N90C/FQPF6N90C
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 6A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
900 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
-- 1.07 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 900 V, V
GS
= 0 V
-- -- 10 µA
V
DS
= 720 V, T
C
= 125°C
-- -- 100 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
3.0 -- 5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3 A
-- 1.93 2.3 Ω
g
FS
Forward Transconductance
V
DS
= 50 V, I
D
= 3 A
(Note 4)
-- 5.5 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1360 1770 pF
C
oss
Output Capacitance -- 110 145 pF
C
rss
Reverse Transfer Capacitance -- 11 15 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 450 V, I
D
= 6 A,
R
G
= 25 Ω
(Note 4, 5)
-- 35 80 ns
t
r
Turn-On Rise Time -- 90 190 ns
t
d(off)
Turn-Off Delay Time -- 55 120 ns
t
f
Turn-Off Fall Time -- 60 130 ns
Q
g
Total Gate Charge
V
DS
= 720 V, I
D
= 6 A,
V
GS
= 10 V
(Note 4, 5)
-- 30 40 nC
Q
gs
Gate-Source Charge -- 9.0 -- nC
Q
gd
Gate-Drain Charge -- 12 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 6.0 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 6 A
-- -- 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 6 A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 630 -- ns
Q
rr
Reverse Recovery Charge -- 6.9 -- µC