Datasheet

ManualsBrandsFairchild ManualsDiscrete SemiconductorsMOSFET N, 900 V 6 A 56 W TO-220

FQP6N90C/FQPF6N90C

QFET

FQP6N90C/FQPF6N90C

900V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

Features

• 6A, 900V, R

DS(on)

= 2.3Ω @V

= 10 V

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

= 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FQP6N90C FQPF6N90C Units

DSS

Drain-Source Voltage 900 V

Drain Current

- Continuous (T

= 25°C)

66 *A

- Continuous (T

= 100°C)

3.8 3.8 * A

Drain Current - Pulsed

(Note 1)

24 24 * A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

650 mJ

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

16.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

167 56 W

- Derate above 25°C 1.43 0.48 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter FQP6N90C FQPF6N90C Units

θJC

Thermal Resistance, Junction-to-Case 0.75 2.25 °C/W

θJS

Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

TO-220

FQP Series

TO-220F

FQPF Series

Summary of content (10 pages)

PAGE 1
TM FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 900 -- -- V -- 1.07 -- V/°C VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.93 2.3 Ω -- 5.
PAGE 3
FQP6N90C/FQPF6N90C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 1 1 10 o 150 C ID, Drain Current [A] ID, Drain Current [A] 10 0 10 o 25 C o -55 C 0 10 -1 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test -2 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 4.
PAGE 4
FQP6N90C/FQPF6N90C Typical Characteristics (Continued) 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.0 A 0.5 150 200 0.0 -100 0 50 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8.
PAGE 5
(Continued) 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C (t) = 0 .7 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .1 0 .0 5 PDM 0 .0 2 θ JC (t), T h e r m a l R e s p o n s e 10 FQP6N90C/FQPF6N90C Typical Characteristics t1 0 .0 1 t2 Z s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 10 D = 0 .5 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 2 .3 ℃ /W M a x .
PAGE 6
FQP6N90C/FQPF6N90C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2003 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Ti
PAGE 7
FQP6N90C/FQPF6N90C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation Rev.
PAGE 8
TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev.
PAGE 9
(Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev.
PAGE 10
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