Datasheet

TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEX
(sus) Collector-Emitter Sustaining Voltage
: TIP47
: TIP48
: TIP49
: TIP50
I
C
= 30mA, I
B
= 0 250
300
350
400
V
V
V
V
I
CEO
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
V
CE
= 150V, I
B
= 0
V
CE
= 200V, I
B
= 0
V
CE
= 250V, I
B
= 0
V
CE
= 300V, I
B
= 0
1
1
1
1
mA
mA
mA
mA
I
CEX
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 450V, V
BE
= 0
V
CE
= 500V, V
BE
= 0
1
1
1
1
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE
* DC Current Gain V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
30
10
150
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 0.2A 1 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= 10V, I
C
= 1A 1.5 V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
= 0.2A, f =
1MHz
10 MHz