Datasheet

TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP42/TIP42A/TIP42B/TIP42C Rev. B0 2
Electrical Characteristics T
A
=25°C unless otherwise noted
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
I
C
= -30mA, I
B
= 0 -40
-60
-80
-100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
V
CE
= -30V, I
B
= 0
V
CE
= -60V, I
B
= 0
-0.7
-0.7
mA
mA
I
CES
Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
V
CE
= -40V, V
EB
= 0
V
CE
= -60V, V
EB
= 0
V
CE
= -80V, V
EB
= 0
V
CE
= -100V, V
EB
= 0
-400
-400
-400
-400
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
= 0 -1 mA
h
FE
* DC Current Gain V
CE
= -4V, I
C
= -0.3A
V
CE
= -4V, I
C
= -3A
30
15 75
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -6A, I
B
= -600mA -1.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= -4V, I
C
= -6A -2.0 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -500mA,
f = 1MHz
3.0 MHz