Datasheet

TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000
V
CE
= 4V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000
I
C
/I
B
= 10
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
110100
0.1
1
10
100
TIP41C V
CEO
MAX.
TIP41B V
CEO
MAX.
TIP41A V
CEO
MAX.
TIP41 V
CEO
MAX.
I
C
(MAX) (DC)
I
C
(MAX) (PULSE)
5
m
s
1
m
s
0
.
5
m
s
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE