Datasheet

TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 2
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
I
C
= 30mA, I
B
= 0 40
60
80
100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
V
CE
= 30V, I
B =
0
V
CE
= 60V, I
B
= 0
0.7
0.7
mA
mA
I
CES
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
400
400
400
400
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE
* DC Current Gain V
CE
= 4V,I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
30
15
75
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 6A, I
B
= 600mA 1.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= 4V, I
C
= 6A 2.0 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA, f = 1MHz 3.0 MHz