Datasheet

TIP32/TIP32A/TIP32B/TIP32C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP32/TIP32A/TIP32B/TIP32C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000
V
CE
= 4V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000
I
C
/I
B
= 10
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
10 100
0.1
1
10
100μs
TIP31C V
CEO
MAX.
TIP31B V
CEO
MAX.
TIP31A V
CEO
MAX.
TIP31 V
CEO
MAX.
I
C
(MAX) (DC)
I
C
(MAX) (PULSE)
5
m
s
1
m
s
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
45
50
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE