Datasheet

TIP32/TIP32A/TIP32B/TIP32C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP32/TIP32A/TIP32B/TIP32C Rev. A 2
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
I
C
= - 30mA, I
B
= 0 -40
-60
-80
-100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP32/32A
: TIP32B/32C
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3
mA
mA
I
CES
Collector Cut-off Current
: TIP32
: TIP32A
: TIP32B
: TIP32C
V
CE
= - 40V, V
EB
= 0
V
CE
= - 60V, V
EB
= 0
V
CE
= - 80V, V
EB
= 0
V
CE
= - 100V, V
CE
= 0
- 200
- 200
- 200
- 200
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA
h
FE
* DC Current Gain V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 375mA - 1.2 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= - 4V, I
C
= - 3A - 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V, I
C
= - 500mA, f = 1MHz 3.0 MHz