Datasheet

TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000 -10000
1
10
100
1000
V
CE
= -4V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-10
-100
-1000
-10000
I
C
/I
B
= 10
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-10 -100
-0.1
-1
-10
DC
TIP30C V
CEO
MAX.
TIP30B V
CEO
MAX.
TIP30A V
CEO
MAX.
TIP30 V
CEO
MAX.
I
C
(MAX) (DC)
I
C
(MAX) (PULSE)
5
m
s
1
m
s
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE