Datasheet

TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP30/TIP30A/TIP30B/TIP30C Rev. A 2
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP30
: TIP30A
: TIP30B
: TIP30C
I
C
= -30mA, I
B
= 0 -40
-60
-80
-100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP30/30A
: TIP30B/30C
V
CE
= -30V, I
B
= 0
V
CE
= -60V, I
B
= 0
-0.3
-0.3
mA
mA
I
CES
Collector Cut-off Current
: TIP30
: TIP30A
: TIP30B
: TIP30C
V
CE
= -40V, V
EB
= 0
V
CE
= -60V, V
EB
= 0
V
CE
= -80V, V
EB
= 0
V
CE
= -100V, V
EB
= 0
-200
-200
-200
-200
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
= 0 -1.0 mA
h
FE
* DC Current Gain V
CE
= -4V,I
C
= -0.2A
V
CE
= -4V, I
C
= -1A
40
15 75
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -1A, I
B
= -125mA -0.7 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= -4V, I
C
= -1A -1.3 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -200mA, f = 1MHz 3.0 MHz