Datasheet

TIP29/TIP29A/TIP29B/TIP29C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29/TIP29A/TIP29B/TIP29C Rev. A 2
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage
: TIP29
: TIP29A
: TIP29B
: TIP29C
I
C
= 30mA, I
B
= 0 40
60
80
100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP29/29A
: TIP29B/29C
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
mA
mA
I
CES
Collector Cut-off Current
: TIP29
: TIP29A
: TIP29B
: TIP29C
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
200
200
200
200
μA
μA
μA
μA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1.0 mA
h
FE
*DC Current Gain V
CE
= 4V, I
C
= 0.2A
V
CE
= 4V, I
C
= 1A
40
15 75
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= 1A, I
B
= 125mA 0.7 V
V
BE
(sat) *Base-Emitter Saturation Voltage V
CE
= 4V, I
C
= 1A 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 200mA 3.0 MHz