Datasheet

TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
I
B
= -2000μA
I
B
= -1800μA
I
B
= -1600μA
I
B
= -1400μA
I
B
= -1200μA
I
B
= -1000μA
I
B
= -800μA
I
B
= -600μA
I
B
= -400μA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
100
1000
10000
100000
V
CE
= -4V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
I
C
=-500I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-10
-100
-1000
f=0.1MHz
V
CB
[V], COLLECTOR-BASE VOLTAGE
C
ob
[pF], CAPACITANCE
-1 -10 -100 -1000
-0.1
-1
-10
-100
TIP146
TIP147
TIP145
DC
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
25
50
75
100
125
150
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE