Datasheet

TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1 2
Electrical Characteristics* T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
I
C
= - 30mA, I
B
= 0 - 60
- 80
- 100
V
V
V
I
CEO
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
- 2
- 2
- 2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 1
- 1
- 1
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= - 5V, I
C
= 0 - 2 mA
h
FE
DC Current Gain V
CE
= - 4V,I
C
= - 5A
V
CE
= - 4V, I
C
= - 10A
1000
500
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 5A, I
B
= - 10mA
I
C
= - 10A, I
B
= - 40mA
- 2
- 3
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= - 10A, I
B
= - 40mA - 3.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= - 4V, I
C
= - 10A - 3 V
t
D
Delay Time
V
CC
= - 30V, I
C
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
= 6Ω
0.15 μs
t
R
Rise Time 0.55 μs
t
STG
Storage Time 2.5 μs
t
F
Fall Time 2.5 μs