Datasheet

TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145 / TIP146 / TIP147 Rev. B1 1
October 2009
TIP145 / TIP146 / TIP147
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000 @ V
CE
= -4V, I
C
= -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
- 60
- 80
- 100
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 10 A
I
CP
Collector Current (Pulse) - 15 A
I
B
Base Current (DC) - 0.5 A
P
C
Collector Dissipation (T
C
=25°C) 125 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 to +150 °C
TO-3P
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1
R2
R1 8kΩ≅
R2 0.12kΩ≅