Datasheet

TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP145T/146T/147T Rev. C 1
August 2008
TIP145T/146T/147T
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000@ V
CE
= - 4V, I
C
= - 5A (Min.)
• Industrial Use
• Complement to TIP140T/141T/142T
Absolute Maximum Ratings * T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
BV
CBO
Collector-Base Voltage : TIP145T
: TIP146T
: TIP147T
- 60
- 80
- 100
V
V
V
BV
CEO
Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
- 60
- 80
- 100
V
V
V
BV
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 10 A
I
CP
Collector Current (Pulse) - 15 A
I
B
Base Current (DC) - 0.5 A
P
C
Collector Dissipation (T
C
=25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Junction Temperature Range - 65 ~ 150 °C
TO-220
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1
R2
R1 8kΩ≅
R2 0.12kΩ≅