Datasheet

TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0 1 2 3 4 5
0
1
2
3
4
5
6
7
8
9
10
I
B
= 2000uA
I
B
= 1800uA
I
B
= 1600uA
I
B
= 1400uA
I
B
=
1
2
0
0
u
A
I
B
=
1
0
0
0
u
A
I
B
= 800uA
I
B
= 600uA
I
B
= 400uA
I
B
= 200uA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
10
100
1k
10k
100k
V
CE
= 4V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
I
C
=500I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
f=0.1MHz
V
CB
[V], COLLECTOR-BASE VOLTAGE
C
ob
[pF], CAPACITANCE
1 10 100 1000
0.1
1
10
100
TIP141T
TIP142T
TIP140T
DC
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE