Datasheet

TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 2
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
I
C
= 30mA, I
B
= 0 60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
1
1
1
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= 5V, I
C
= 0 2 mA
h
FE
DC Current Gain V
CE
= 4V, I
C
= 5A
V
CE
=4V, I
C
= 10A
1000
500
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
2
3
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 10A, I
B
= 40mA 3.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 4V, I
C
= 10A 3 V
t
D
Delay Time V
CC
= 30V, I
C
= 5A
I
B1
= 20mA
I
B2
= -20mA
R
L
= 6Ω
0.15 µs
t
R
Rise Time 0.55 µs
t
STG
Storage Time 2.5 µs
t
F
Fall Time 2.5 µs