Datasheet

TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2 1
July 2009
TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
Absolute Maximum Ratings * T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 10 A
I
CP
Collector Current (Pulse) 15 A
I
B
Base Current (DC) 0.5 A
P
C
Collector Dissipation (T
C
=25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 to +150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1
R2
R1 8kΩ≅
R2 0.12kΩ≅