Datasheet

TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1k
10k
V
CE
= 4V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
I
C
= 250I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
10
100
1000
C
ob
f = 0.1MHz
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
C
ob
[pF] C
ib
[pF], CAPACITANCE
C
ib
-1 -10 -100
-0.01
-0.1
-1
-10
TIP126
TIP127
TIP125
DC
5m
s
100ms
500ms
1
m
s
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
15
30
45
60
75
90
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE