Datasheet

TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 1
October 2008
TIP125/TIP126/TIP127
PNP Epitaxial Darlington Transistor
• Medium Power Linear Switching Applications
• Complementary to TIP120/121/122
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage : TIP125
: TIP126
: TIP127
- 60
- 80
- 100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP125
: TIP126
: TIP127
- 60
- 80
- 100
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 5 A
I
CP
Collector Current (Pulse) - 8 A
I
B
Base Current (DC) - 120 mA
P
C
Collector Dissipation (T
a
=25°C) 2 W
Collector Dissipation (T
C
=25°C) 65 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1
R2
R1 8 kW@
R2 0.12k W@