Datasheet

TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP125
: TIP126
: TIP127
I
C
= -100mA, I
B
= 0 -60
-80
-120
V
V
V
I
CEO
Collector Cut-off Current
: TIP125
: TIP126
: TIP127
V
CE
= -30V, I
B
= 0
V
CE
= -40V, I
B
= 0
V
CE
= -50V, I
B
= 0
-2
-2
-2
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP125
: TIP126
: TIP127
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CB
= -100V, I
E
= 0
-1
-1
-1
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= -5V, I
C
= 0 -2 mA
h
FE
* DC Current Gain V
CE
= -3V, I
C
= 0.5A
V
CE
= -3V, I
C
= -3A
1000
1000
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -3A, I
B
= -12mA
I
C
=-5A, I
B
=-20mA
-2
-4
V
V
V
BE
(on) * Base-Emitter On Voltage V
CE
= -3V, I
C
= -3A -2.5 V
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f =
0.1MHz
300 pF