Datasheet

TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 3
Typical characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
V
CE
= 4V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.1 1 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
C
= 250I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
C
ob
f=0.1MHz
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
C
ob
[pF] C
ib
[pF], CAPACITANCE
C
ib
1 10 100
0.01
0.1
1
10
TIP121
TIP122
TIP120
DC
5ms
100m
s
500
ms
1ms
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE