Datasheet

TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
I
C
= 100mA, I
B
= 0 60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
0.5
0.5
0.5
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
0.2
0.2
0.2
mA
mA
mA
I
EBO
Emitter Cut-off Current V
BE
= 5V, I
C
= 0 2 mA
h
FE
* DC Current Gain V
CE
= 3V,I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
1000
1000
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
2.0
4.0
V
V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 3V, I
C
= 3A 2.5 V
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f =
0.1MHz
200 pF