Datasheet

TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120/TIP121/TIP122 Rev. 1.0.0 1
October 2008
TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
• Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
V
CEO
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 5 A
I
CP
Collector Current (Pulse) 8 A
I
B
Base Current (DC) 120 mA
P
C
Collector Dissipation (T
a
=25°C) 2 W
Collector Dissipation (T
C
=25°C) 65 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8 kW@
R2 0.12k W@