Datasheet

TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120 / TIP121 / TIP122 Rev. 1.1.0 2
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
P
C
Collector Dissipation (T
A
= 25°C) 2
W
Collector Dissipation (T
C
= 25°C) 65
Symbol Parameter Conditions Min. Max. Unit
V
CEO
(sus)
Collector-Emitter Sustaining
Voltage
TIP120
I
C
= 100 mA, I
B
= 0
60
VTIP121 80
TIP122 100
I
CEO
Collector Cut-Off Current
TIP120 V
CE
= 30 V, I
B
= 00.5
mATIP121 V
CE
= 40 V, I
B
= 0 0.5
TIP122 V
CE
= 50 V, I
B
= 0 0.5
I
CBO
Collector Cut-Off Current
TIP120 V
CB
= 60 V, I
E
= 0 0.2
mATIP121 V
CB
= 80 V, I
E
= 0 0.2
TIP122 V
CB
= 100 V, I
E
= 0 0.2
I
EBO
Emitter Cut-Off Current V
EB
= 5 V, I
C
= 0 2 mA
h
FE
DC Current Gain
(1)
V
CE
= 3 V, I
C
= 0.5 A 1000
V
CE
= 3 V, I
C
= 3 A 1000
V
CE
(sat) Collector-Emitter Saturation Voltage
(1)
I
C
= 3 A, I
B
= 12 mA 2.0
V
I
C
= 5 A, I
B
= 20 mA 4.0
V
BE
(on) Base-Emitter On Voltage
(1)
V
CE
= 3 V, I
C
= 3 A 2.5 V
C
ob
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 0.1 MHz
200 pF