Datasheet

TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP110 / TIP111 / TIP112 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
B
= 400μA
I
B
= 450μA
I
B
= 500μA
I
B
=
3
5
0
μ
A
I
B
=
3
0
0
μ
A
I
B
=
2
5
0
μ
A
I
B
= 200μA
I
B
= 150μA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
10
100
1000
10000
V
CE
= 4V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
100
I
C
= 500 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.01 0.1 1 10 100
1
10
100
1000
f = 0.1 MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
1 10 100
0.1
1
10
1
m
S
5
m
S
D
C
TIP 110
TIP 111
TIP 112
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE